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ST 2SD2150U
NPN Silicon Epitaxial Planar Transistor
Low frequency transistor
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - DC Collector Current - Pulse 1) Total Power Dissipation Junction Temperature Storage Temperature Range
1) 2)
Symbol VCBO VCEO VEBO IC ICP Ptot TJ TS
Value 40 20 6 3 5 1) 0.5 2 2) 150 - 55 to + 150
Unit V V V A W
O
C C
O
Single pulse Pw = 10 ms. Mounted on a 40 X 40 X 0.7 mm ceramic substrate.
Characteristics at Ta = 25 OC
Parameter DC Current Gain at VCE = 2 V, IC = 100 mA Collector Base Breakdown Voltage at IC = 50 A Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 50 A Collector Cutoff Current
at VCB = 30 V
Symbol Current Gain Group R S hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT Cob
Min. 180 270 40 20 6 -
Typ. 290 25
Max. 390 560 100 100 0.5 -
Unit V V V nA nA V MHz pF
Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 2 A, IB = 100 mA Transition Frequency at VCE = 2 V, -IE = 500 mA, f = 100 MHz Collector Output Capacitance at VCE = 10 V, IE = 0 A, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/05/2007
ST 2SD2150U
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/05/2007
ST 2SD2150U
SOT-89 PACKAGE OUTLINE
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/05/2007

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